Electric field-induced transport modulation in VO2 FETs with high- k oxide/organic parylene-C hybrid gate dielectric

Tingting Wei; Teruo Kanki; Kohei Fujiwara; Masashi Chikanari; Hidekazu Tanaka

doi:10.1063/1.4941233

Electric field-induced transport modulation in VO₂ FETs with high- k oxide/organic parylene-C hybrid gate dielectric

Tingting Wei, Teruo Kanki, Kohei Fujiwara, Masashi Chikanari, Hidekazu Tanaka

金属材料研究所・材料物性研究部

研究成果: Article › 査読

13 被引用数 (Scopus)

抄録

We report on the observation of reversible and immediate resistance switching by high-k oxide Ta₂O₅/organic parylene-C hybrid dielectric-gated VO₂ thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO₂ through the electrostatic field-induced transport modulation.

本文言語	English
論文番号	053503
ジャーナル	Applied Physics Letters
巻	108
号	5
DOI	https://doi.org/10.1063/1.4941233
出版ステータス	Published - 2016 2月 1

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4941233

他のファイルとリンク

引用スタイル

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title = "Electric field-induced transport modulation in VO2 FETs with high- k oxide/organic parylene-C hybrid gate dielectric",

abstract = "We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.",

author = "Tingting Wei and Teruo Kanki and Kohei Fujiwara and Masashi Chikanari and Hidekazu Tanaka",

note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research A (No. 26246013) and a Grant-in-Aid for Scientific Research B (No. 25286058) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

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T1 - Electric field-induced transport modulation in VO2 FETs with high- k oxide/organic parylene-C hybrid gate dielectric

AU - Wei, Tingting

AU - Kanki, Teruo

AU - Fujiwara, Kohei

AU - Chikanari, Masashi

AU - Tanaka, Hidekazu

N1 - Funding Information: This work was supported by a Grant-in-Aid for Scientific Research A (No. 26246013) and a Grant-in-Aid for Scientific Research B (No. 25286058) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2016 AIP Publishing LLC.

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N2 - We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

AB - We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

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