Electrical conductivity of sidewall-deposited fluorocarbon polymer in SiO2 etching processes

T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane

研究成果: ジャーナルへの寄稿学術論文査読

16 被引用数 (Scopus)

抄録

The sidewall current in SiO2 contact holes was measured by the method of on-wafer monitoring. Depending on the structure of the deposited fluorocarbon polymer, the sidewall current changed markedly. The fluorocarbon film deposited during the etching processes affected the charge accumulation in high-aspect-ratio contact holes. It was found that the highly cross-linked fluorocarbon film with many -C=C- bonds induces high sidewall current compared to the high-fluorine content polymer films.

本文言語英語
ページ(範囲)2346-2350
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
6
DOI
出版ステータス出版済み - 2002 11月

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