Electrical transport properties and spin injection in Co 2FeAl0.5Si0.5/GaAs junctions

研究成果: ジャーナルへの寄稿学術論文査読

8 被引用数 (Scopus)

抄録

We investigated the electrical transport properties in Co 2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.

本文言語英語
論文番号6027836
ページ(範囲)2447-2450
ページ数4
ジャーナルIEEE Transactions on Magnetics
47
10
DOI
出版ステータス出版済み - 2011 10月

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