Electron and hole proximity effects in the InAs/AlSb/GaSb system

Jöran H. Roslund, Ken Saito, Kyoichi Suzuki, Hiroshi Yamaguchi, Yoshiro Hirayama

研究成果: ジャーナルへの寄稿学術論文査読

9 被引用数 (Scopus)

抄録

We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

本文言語英語
ページ(範囲)2448-2451
ページ数4
ジャーナルJapanese Journal of Applied Physics
39
4 B
DOI
出版ステータス出版済み - 2000

フィンガープリント

「Electron and hole proximity effects in the InAs/AlSb/GaSb system」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル