Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Tetsuo Endoh

doi:10.1109/VLSI-DAT.2017.7939702

Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

Tetsuo Endoh

工学研究科・電気エネルギーシステム専攻

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Recently in semiconductor memories such as embedded memories (SRAM, e-DRAM), main memories (DRAM) and storage memories (NAND memory), it is becoming difficult to meet the target performance only by scaling technologies. Especially for high speed embedded memories, the large power consumption brings more serious issues due to rapid increase in memory capacity under multi core MPUs, operation speed and leakage current of scaled CMOS. Moreover, the speed gap between each memory levels in addition to that between the operation speed of MPUs and that of embedded memories and main memories have expanded year by year.

本文言語	English
ホスト出版物のタイトル	2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781509039692
DOI	https://doi.org/10.1109/VLSI-DAT.2017.7939702
出版ステータス	Published - 2017 6月 5
イベント	2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017 - Hsinchu, Taiwan, Province of China 継続期間: 2017 4月 24 → 2017 4月 27

出版物シリーズ

名前	2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017

Other

Other	2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017
国/地域	Taiwan, Province of China
City	Hsinchu
Period	17/4/24 → 17/4/27

ASJC Scopus subject areas

電子工学および電気工学
安全性、リスク、信頼性、品質管理

文献へのアクセス

10.1109/VLSI-DAT.2017.7939702

他のファイルとリンク

引用スタイル

Endoh, T. (2017). Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. In 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017 [7939702] (2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-DAT.2017.7939702

Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. / Endoh, Tetsuo.
2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7939702 (2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017).

研究成果: Conference contribution

Endoh, T 2017, Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. in 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017., 7939702, 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017, Hsinchu, Taiwan, Province of China, 17/4/24. https://doi.org/10.1109/VLSI-DAT.2017.7939702

Endoh T. Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. In 2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7939702. (2017 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2017). doi: 10.1109/VLSI-DAT.2017.7939702

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Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

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出版物シリーズ

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ASJC Scopus subject areas

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