Energy location of Ce3+ 4f level and majority carrier type in Gd3Al2Ga3O12:Ce crystals studied by surface photovoltage spectroscopy

Mamoru Kitaura, Junpei Azuma, Manabu Ishizaki, Kei Kamada, Shunsuke Kurosawa, Shinta Watanabe, Akimasa Ohnishi, Kazuhiko Hara

研究成果: ジャーナルへの寄稿学術論文査読

7 被引用数 (Scopus)

抄録

Gd3Al2Ga3O12:Ce (GAGG:Ce) was studied by surface photovoltage spectroscopy using the ultraviolet photoelectron spectroscopy technique with synchrotron radiation and a laser source. The lowest Ce3+ 4f level is located below the conduction band minimum by 3.02 eV. This result is supported by the excitation spectrum for photo-stimulated luminescence and is compatible with the value predicted by the vacuum-referred binding energy scheme for GAGG:Ce. It is also found that GAGG:Ce is of the p-type. The information on the energy location of the Ce3+ 4f level and majority carrier type provides us with hints on how to improve the optical properties of GAGG:Ce for photonic device applications.

本文言語英語
論文番号251101
ジャーナルApplied Physics Letters
110
25
DOI
出版ステータス出版済み - 2017 6月 19

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