Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer

D. Tomida, Y. Kagamitani, Q. Bao, K. Hazu, H. Sawayama, S. F. Chichibu, C. Yokoyama, T. Fukuda, T. Ishiguro

研究成果: ジャーナルへの寄稿学術論文査読

36 被引用数 (Scopus)

抄録

High-temperature gallium nitride (GaN) crystal growth using the acidic ammonothermal method with ammonium iodide (NH 4I) as a mineralizer was investigated. The growth rate reached 105 μm/day, which was much higher than that previously achieved using acidic ammonothermal methods, and exceeded 100 μm/day, which is the minimum growth rate required for industrial applications. When NH 4I was used as a mineralizer, high-speed crystal growth was achieved at a relatively low pressure compared to the case of using an ammonium chloride (NH 4Cl) as a mineralizer.

本文言語英語
ページ(範囲)59-62
ページ数4
ジャーナルJournal of Crystal Growth
353
1
DOI
出版ステータス出版済み - 2012 8月 15

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