Enhancement of Al thin wire fabrication by using electromigration in relation to the discharge resistance of the atoms

Yebo Lu, Hironori Tohmyoh, Masumi Saka, Hongliang Pan

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The utilization of electromigration for enhancement of Al thin wire fabrication was investigated. The experimental sample was a passivated Al line with a square hole at the anode end, and wire fabrication was affected by both the thickness of the passivation layer and the side length of the hole. The optimum value of the passivation layer thickness was determined. Both the time to failure of the Al line and the length of formed wire increased with increasing thickness up to the optimum thickness. Wire fabrication was also enhanced by increasing the side length of the discharge hole.

本文言語English
ページ(範囲)1219-1222
ページ数4
ジャーナルOptoelectronics and Advanced Materials, Rapid Communications
5
11
出版ステータスPublished - 2011

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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