Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo; Shin Ichi O'uchi; Yuki Ishikawa; Yongxum Liu; Takashi Matsukawa; Meishoku Masahara; Kunihiro Sakamoto; Junichi Tsukada; Kenichi Ishii; Hiromi Yamauchi; Eiichi Suzuki

doi:10.1143/APEX.2.054502

Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

流体科学研究所・附属統合流動科学国際研究教育センター

National Institute of Advanced Industrial Science and Technology

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

5 被引用数 (Scopus)

抄録

We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V _th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the V_th of the pass gates.

本文言語	英語
論文番号	054502
ジャーナル	Applied Physics Express
巻	2
号	5
DOI	https://doi.org/10.1143/APEX.2.054502
出版ステータス	出版済み - 2009 5月

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10.1143/APEX.2.054502

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引用スタイル

Endo, K., O'uchi, S. I., Ishikawa, Y., Liu, Y., Matsukawa, T., Masahara, M., Sakamoto, K., Tsukada, J., Ishii, K., Yamauchi, H., & Suzuki, E. (2009). Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates. Applied Physics Express, 2(5), 記事 054502. https://doi.org/10.1143/APEX.2.054502

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abstract = "We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.",

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Endo, K, O'uchi, SI, Ishikawa, Y, Liu, Y, Matsukawa, T, Masahara, M, Sakamoto, K, Tsukada, J, Ishii, K, Yamauchi, H & Suzuki, E 2009, 'Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates', Applied Physics Express, vol. 2, no. 5, 054502. https://doi.org/10.1143/APEX.2.054502

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AU - Endo, Kazuhiko

AU - O'uchi, Shin Ichi

AU - Ishikawa, Yuki

AU - Liu, Yongxum

AU - Matsukawa, Takashi

AU - Masahara, Meishoku

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Ishii, Kenichi

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

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AB - We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.

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