Epitaxial growth of Ce-doped (Pb,Gd)3(Al,Ga)5O12 films and their optical and scintillation properties

Dmitrii A. Vasil'ev, Dmitry A. Spassky, Shunsuke Kurosawa, Sergey I. Omelkov, Natalia V. Vasil'eva, Victor G. Plotnichenko, Andrey V. Khakhalin, Valery V. Voronov, Vladimir V. Kochurikhin

研究成果: Article査読

4 被引用数 (Scopus)


Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbO–B2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. The optical and scintillation properties of the epitaxial garnet films were studied. The 5d-4f emission of Ce3+ ions within 450–650 nm was observed. The highest pulsed cathodoluminescence yield and scintillation yield values under 133Ba excitation for the Pb0.01Ce0.02Gd2.97Al3.13Ga1.87O12 film were 43,100 photons/MeV and 20,000 photons/MeV, respectively. The pulsed cathodoluminescence decay times of the film were 1.8 (1%), 24 (25%), and 60 ns (74%), and the scintillation decay times were 3.9 (7%) and 43.6 ns (93%). Because of the rapid decay and high light yield, Се-doped (Pb,Gd)3(Al,Ga)5O12 garnet films can be used in X-ray scintillators for different applications, such as homeland security.

ジャーナルJournal of Science: Advanced Materials and Devices
出版ステータスPublished - 2020 3月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • 生体材料
  • 材料科学(その他)


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