TY - JOUR
T1 - Epitaxial growth of Ce-doped (Pb,Gd)3(Al,Ga)5O12 films and their optical and scintillation properties
AU - Vasil'ev, Dmitrii A.
AU - Spassky, Dmitry A.
AU - Kurosawa, Shunsuke
AU - Omelkov, Sergey I.
AU - Vasil'eva, Natalia V.
AU - Plotnichenko, Victor G.
AU - Khakhalin, Andrey V.
AU - Voronov, Valery V.
AU - Kochurikhin, Vladimir V.
N1 - Funding Information:
The work was carried out with financial support from the Ministry of Science and High Education of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (№ К3-2018-030 ), implemented by a governmental decree dated 16th of March 2013, N 211. This work was supported in part by the European Social Fund’s Doctoral Studies and Internationalisation Programme DoRa and Estonian Research Council ( PUT1081 ); in part by M.V. Lomonosov Moscow State University Program of Development.
Funding Information:
The work was carried out with financial support from the Ministry of Science and High Education of the Russian Federation in the framework of Increase Competitiveness Program of NUST ?MISiS? (? ?3-2018-030), implemented by a governmental decree dated 16th of March 2013, N 211. This work was supported in part by the European Social Fund's Doctoral Studies and Internationalisation Programme DoRa and Estonian Research Council (PUT1081); in part by M.V. Lomonosov Moscow State University Program of Development.
Publisher Copyright:
© 2020 The Authors
PY - 2020/3
Y1 - 2020/3
N2 - Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbO–B2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. The optical and scintillation properties of the epitaxial garnet films were studied. The 5d-4f emission of Ce3+ ions within 450–650 nm was observed. The highest pulsed cathodoluminescence yield and scintillation yield values under 133Ba excitation for the Pb0.01Ce0.02Gd2.97Al3.13Ga1.87O12 film were 43,100 photons/MeV and 20,000 photons/MeV, respectively. The pulsed cathodoluminescence decay times of the film were 1.8 (1%), 24 (25%), and 60 ns (74%), and the scintillation decay times were 3.9 (7%) and 43.6 ns (93%). Because of the rapid decay and high light yield, Се-doped (Pb,Gd)3(Al,Ga)5O12 garnet films can be used in X-ray scintillators for different applications, such as homeland security.
AB - Се-doped (Pb,Gd)3(Al,Ga)5O12 single crystalline garnet films were grown using liquid-phase epitaxy from four series of supercooled PbO–B2O3-based melt solutions on Gd3Ga5O12 and Gd3Al2.26Ga2.74O12 single crystal substrates. The optical and scintillation properties of the epitaxial garnet films were studied. The 5d-4f emission of Ce3+ ions within 450–650 nm was observed. The highest pulsed cathodoluminescence yield and scintillation yield values under 133Ba excitation for the Pb0.01Ce0.02Gd2.97Al3.13Ga1.87O12 film were 43,100 photons/MeV and 20,000 photons/MeV, respectively. The pulsed cathodoluminescence decay times of the film were 1.8 (1%), 24 (25%), and 60 ns (74%), and the scintillation decay times were 3.9 (7%) and 43.6 ns (93%). Because of the rapid decay and high light yield, Се-doped (Pb,Gd)3(Al,Ga)5O12 garnet films can be used in X-ray scintillators for different applications, such as homeland security.
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U2 - 10.1016/j.jsamd.2020.01.005
DO - 10.1016/j.jsamd.2020.01.005
M3 - Article
AN - SCOPUS:85079177124
SN - 2468-2284
VL - 5
SP - 95
EP - 103
JO - Journal of Science: Advanced Materials and Devices
JF - Journal of Science: Advanced Materials and Devices
IS - 1
ER -