Evidence of a transition from nonlinear to linear screening of a two-dimensional electron system detected by photoluminescence spectroscopy

M. Yamaguchi, S. Nomura, T. Maruyama, S. Miyashita, Y. Hirayama, H. Tamura, T. Akazaki

研究成果: ジャーナルへの寄稿学術論文査読

11 被引用数 (Scopus)

抄録

We clearly identify single-electron-localization (SEL), nonlinear screening (NLS), and linear screening (LS) regimes of gate induced electrons in a GaAs quantum well from photoluminescence spectra and intergate capacitance. Neutral and charged excitons observed in the SEL regime rapidly lose their oscillator strength when electron puddles are formed, which mark the onset of NLS. A further increase in the density of the electrons induces the transition from the NLS to LS, where the emission of a charged exciton changes to the recombination of two-dimensional electron gas and a hole.

本文言語英語
論文番号207401
ジャーナルPhysical Review Letters
101
20
DOI
出版ステータス出版済み - 2008 11月 11

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