Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

Shigefusa Chichibu; Satoru Matsumoto; Sho Shirakata; Shigehiro Isomura; Hirofumi Higuchi

doi:10.1063/1.355129

Excitonic photoluminescence in a CuAlSe₂ chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition

Shigefusa Chichibu, Satoru Matsumoto, Sho Shirakata, Shigehiro Isomura, Hirofumi Higuchi

多元物質科学研究所・計測研究部門

研究成果: ジャーナルへの寄稿 › 学術論文 › 査読

32 被引用数 (Scopus)

抄録

Excitonic photoluminescence (PL) in a CuAlSe₂ chalcopyrite semiconductor was observed. High-quality CuAlSe₂ epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

本文言語	英語
ページ（範囲）	6446-6447
ページ数	2
ジャーナル	Journal of Applied Physics
巻	74
号	10
DOI	https://doi.org/10.1063/1.355129
出版ステータス	出版済み - 1993

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abstract = "Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.",

author = "Shigefusa Chichibu and Satoru Matsumoto and Sho Shirakata and Shigehiro Isomura and Hirofumi Higuchi",

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AU - Chichibu, Shigefusa

AU - Matsumoto, Satoru

AU - Shirakata, Sho

AU - Isomura, Shigehiro

AU - Higuchi, Hirofumi

PY - 1993

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AB - Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High-quality CuAlSe2 epilayers were grown by the low-pressure metalorganic chemical-vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.

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