Extended vacancy-type defects in silicon induced at low temperatures by electron irradiation

J. Yamasaki, Y. Ohno, S. Takeda, Y. Kimura

研究成果: ジャーナルへの寄稿学術論文査読

4 被引用数 (Scopus)

抄録

We have observed the formation of extended defects in silicon at low temperatures (below 25 K) by means of in-situ high-resolution transmission electron microscopy (HRTEM). The defects are distorted spheres, occasionally truncated by facets, less than 5nm in diameter. These defects are stable up to 773 K, and they gradually shrink during annealing in the temperature range from 773 to 973 K. From the analysis of HRTEM images of the defects, we have suggested that the defects are voids formed via athermal migration of vacancies under electron irradiation.

本文言語英語
ページ(範囲)151-163
ページ数13
ジャーナルPhilosophical Magazine
83
2
DOI
出版ステータス出版済み - 2003 1月 11

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