Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Hiroshi Mizuta, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Muruagnathan Manoharan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, Darren M. Bagnall

研究成果: Conference contribution

2 被引用数 (Scopus)


In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

ホスト出版物のタイトルCarbon Nanotubes, Graphene, and Associated Devices V
出版ステータスPublished - 2012
イベントCarbon Nanotubes, Graphene, and Associated Devices V - San Diego, CA, United States
継続期間: 2012 8月 142012 8月 15


名前Proceedings of SPIE - The International Society for Optical Engineering


ConferenceCarbon Nanotubes, Graphene, and Associated Devices V
国/地域United States
CitySan Diego, CA

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学


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