TY - JOUR
T1 - Fabrication and characterization of Mn doped SnO2 thin films
AU - Kimura, H.
AU - Fukumura, T.
AU - Koinuma, H.
AU - Kawasaki, M.
PY - 2001/5
Y1 - 2001/5
N2 - Epitaxial films of Mn doped SnO2 were fabricated with pulsed laser deposition method. Thin films with (1 0 1) and (1 0 0) orientations were grown on r-(1 1̄02) and c-(0 0 0 1) sapphire substrates, respectively. Mn ions are soluble into SnO2 films up to 30 mol%. Transmission spectra show d-d transition absorption in mid-gap region due to presence of the Mn ion. Additional doping of Sb induces an n-type conduction with a carrier concentration as high as 6.9 × 1019 cm-3 at 300 K. The resistivity rapidly increases with decreasing the temperature below 50 K, where considerable increase of the resistivity is observed in a magnetic field below 20 K.
AB - Epitaxial films of Mn doped SnO2 were fabricated with pulsed laser deposition method. Thin films with (1 0 1) and (1 0 0) orientations were grown on r-(1 1̄02) and c-(0 0 0 1) sapphire substrates, respectively. Mn ions are soluble into SnO2 films up to 30 mol%. Transmission spectra show d-d transition absorption in mid-gap region due to presence of the Mn ion. Additional doping of Sb induces an n-type conduction with a carrier concentration as high as 6.9 × 1019 cm-3 at 300 K. The resistivity rapidly increases with decreasing the temperature below 50 K, where considerable increase of the resistivity is observed in a magnetic field below 20 K.
KW - d-d transition
KW - Diluted magnetic semiconductors
KW - Epitaxial SnO thin films
KW - Transparent conductive oxide
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U2 - 10.1016/S1386-9477(01)00096-0
DO - 10.1016/S1386-9477(01)00096-0
M3 - Article
AN - SCOPUS:0035338277
SN - 1386-9477
VL - 10
SP - 265
EP - 267
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
IS - 1-3
ER -