@article{01b9129b703a4d62bc36b7034c513bec,
title = "Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications",
abstract = "The direct integrating of GaAs and diamond is achieved at room temperature via a surface activated bonding method. An ultrathin crystal defect layer composed of GaAs and diamond was formed at the bonding interface. The thickness of the GaAs and diamond crystal defect layers was determined to be 0.4 and 1.6 nm, respectively. After annealing at 400 °C, no changes were observed in the thickness of the crystal defect layer and the interfacial structure. The thermal characterization of the transmission line model (TLM) patterns formed on the GaAs layer bonded to diamond and sapphire substrates is demonstrated. The thermal resistance of the GaAs TLM patterns formed on the diamond and sapphire substrates was determined to be 6 and 34.9 K/W, respectively. The GaAs TLM patterns formed on the diamond showed an excellent heat dissipation property due to the high thermal conductivity of diamond.",
keywords = "Direct bonding, GaAs/diamond bonding interface, Heat sink, Heterointerface, Interfacial structure, Power devices",
author = "Jianbo Liang and Yuji Nakamura and Tianzhuo Zhan and Yutaka Ohno and Yasuo Shimizu and Kazu Katayama and Takanobu Watanabe and Hideto Yoshida and Yasuyoshi Nagai and Hongxing Wang and Makoto Kasu and Naoteru Shigekawa",
note = "Funding Information: This work was supported partly by the Hirose International Scholarship Foundation. The fabrication of STEM samples and a part of STEM observation were, respectively, performed at The Oarai Center and the Laboratory of Alpha-Ray Emitters in IMR, under the Inter-University Cooperative Research in IMR of Tohoku University (NO. 18M0045 and 19M0037). STEM-EDS was performed at ISIR under the Cooperative Research Program of “Network Joint Research Center for Materials and Devices: Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” (No. 20191240). A part of this work was supported by Kyoto University Nano Technology Hub in the “Nanotechnology Platform Project” sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Funding Information: This work was supported partly by the Hirose International Scholarship Foundation . The fabrication of STEM samples and a part of STEM observation were, respectively, performed at The Oarai Center and the Laboratory of Alpha-Ray Emitters in IMR, under the Inter-University Cooperative Research in IMR of Tohoku University (NO. 18M0045 and 19M0037). STEM-EDS was performed at ISIR under the Cooperative Research Program of “Network Joint Research Center for Materials and Devices: Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” (No. 20191240). A part of this work was supported by Kyoto University Nano Technology Hub in the “Nanotechnology Platform Project” sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",
year = "2021",
month = jan,
doi = "10.1016/j.diamond.2020.108207",
language = "English",
volume = "111",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
}