Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles

H. T.T. Tran; K. Matsumoto; M. Moriya; H. Shimada; Y. Kimura; A. Hirano-Iwata; Y. Mizugaki

doi:10.1109/NANO.2016.7751353

Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles

H. T.T. Tran, K. Matsumoto, M. Moriya, H. Shimada, Y. Kimura, A. Hirano-Iwata, Y. Mizugaki

電気通信研究所・人間・生体情報システム研究部門

研究成果: 書籍の章/レポート/Proceedings › 会議への寄与 › 査読

3 被引用数 (Scopus)

抄録

We fabricated single electron transistors (SETs) by using gold nanoparticles as their islands. With a simple method of the fabrication, characteristics of capacitively- and resistively-coupled SETs (C-SETs and R-SETs) were achieved at 77 K and room temperature.

本文言語	英語
ホスト出版物のタイトル	16th International Conference on Nanotechnology - IEEE NANO 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	131-134
ページ数	4
ISBN（電子版）	9781509039142
DOI	https://doi.org/10.1109/NANO.2016.7751353
出版ステータス	出版済み - 2016 11月 21
イベント	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, 日本継続期間: 2016 8月 22 → 2016 8月 25

出版物シリーズ

名前	16th International Conference on Nanotechnology - IEEE NANO 2016

会議

会議	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
国/地域	日本
City	Sendai
Period	16/8/22 → 16/8/25

文献へのアクセス

10.1109/NANO.2016.7751353

他のファイルとリンク

引用スタイル

Tran, H. T. T., Matsumoto, K., Moriya, M., Shimada, H., Kimura, Y., Hirano-Iwata, A., & Mizugaki, Y. (2016). Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 131-134). 記事 7751353 (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751353

Tran, H. T.T. ; Matsumoto, K. ; Moriya, M. その他. / Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 131-134 (16th International Conference on Nanotechnology - IEEE NANO 2016).

@inproceedings{24f6281e8ce645ff972c679843978fda,

title = "Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles",

abstract = "We fabricated single electron transistors (SETs) by using gold nanoparticles as their islands. With a simple method of the fabrication, characteristics of capacitively- and resistively-coupled SETs (C-SETs and R-SETs) were achieved at 77 K and room temperature.",

author = "Tran, {H. T.T.} and K. Matsumoto and M. Moriya and H. Shimada and Y. Kimura and A. Hirano-Iwata and Y. Mizugaki",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/NANO.2016.7751353",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Tran, HTT, Matsumoto, K, Moriya, M, Shimada, H, Kimura, Y, Hirano-Iwata, A & Mizugaki, Y 2016, Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751353, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 131-134, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, 日本, 16/8/22. https://doi.org/10.1109/NANO.2016.7751353

Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles. / Tran, H. T.T.; Matsumoto, K.; Moriya, M. その他.
16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 131-134 7751353 (16th International Conference on Nanotechnology - IEEE NANO 2016).

研究成果: 書籍の章/レポート/Proceedings › 会議への寄与 › 査読

TY - GEN

T1 - Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles

AU - Tran, H. T.T.

AU - Matsumoto, K.

AU - Moriya, M.

AU - Shimada, H.

AU - Kimura, Y.

AU - Hirano-Iwata, A.

AU - Mizugaki, Y.

PY - 2016/11/21

Y1 - 2016/11/21

N2 - We fabricated single electron transistors (SETs) by using gold nanoparticles as their islands. With a simple method of the fabrication, characteristics of capacitively- and resistively-coupled SETs (C-SETs and R-SETs) were achieved at 77 K and room temperature.

AB - We fabricated single electron transistors (SETs) by using gold nanoparticles as their islands. With a simple method of the fabrication, characteristics of capacitively- and resistively-coupled SETs (C-SETs and R-SETs) were achieved at 77 K and room temperature.

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U2 - 10.1109/NANO.2016.7751353

DO - 10.1109/NANO.2016.7751353

M3 - Conference contribution

AN - SCOPUS:85006856529

T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 131

EP - 134

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016

Y2 - 22 August 2016 through 25 August 2016

ER -

Tran HTT, Matsumoto K, Moriya M, Shimada H, Kimura Y, Hirano-Iwata A その他. Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 131-134. 7751353. (16th International Conference on Nanotechnology - IEEE NANO 2016). doi: 10.1109/NANO.2016.7751353

Fabrication of high temperature capacitively- and resistively-coupled single electron transistors using gold nanoparticles

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