TY - JOUR
T1 - Fabrication of tetragonal FeSe-FeS alloy films with high sulfur contents by alternate deposition
AU - Fujiwara, Kohei
AU - Shiogai, Junichi
AU - Tsukazaki, Atsushi
N1 - Funding Information:
Acknowledgments We would like to thank I. Narita for his assistance with electron probe microanalysis. This work was performed under the InterUniversity Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 17K0417). This work was partly supported by a Grant-in-Aid for Specially Promoted Research (No. 25000003) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/10
Y1 - 2017/10
N2 - We report the synthesis of tetragonal FeSxSe1-x films (x : 0.78) by pulsed-laser deposition. To fabricate tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with an FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS/FeSe layers. The out-of-plane lattice parameter of the films follows Vegard's law, demonstrating homogeneous alloying by interdiffusion. The sulfur solid solubility reaches x = 0.78 in the FeSxSe1-x films, which is by far higher than x 0.40 in bulk governed by the tetragonal phase instability.
AB - We report the synthesis of tetragonal FeSxSe1-x films (x : 0.78) by pulsed-laser deposition. To fabricate tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with an FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS/FeSe layers. The out-of-plane lattice parameter of the films follows Vegard's law, demonstrating homogeneous alloying by interdiffusion. The sulfur solid solubility reaches x = 0.78 in the FeSxSe1-x films, which is by far higher than x 0.40 in bulk governed by the tetragonal phase instability.
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U2 - 10.7567/JJAP.56.100308
DO - 10.7567/JJAP.56.100308
M3 - Article
AN - SCOPUS:85030648579
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 10
M1 - 100308
ER -