Fast crystal nucleation induced by surface oxidation in Si-doped GeTe amorphous thin film

研究成果: ジャーナルへの寄稿学術論文査読

8 被引用数 (Scopus)

抄録

Fast crystallization in the phase change materials (PCMs) used for optical and electrical phase change memory improves their data recording rate. In the present work, it was found that the preferential surface oxidation of Si shortens the nucleation time of Ge 46.55Te 46.55Si 6.9 amorphous films. The nucleation time of a surface-oxidized film was approximately 20 faster than that of a non-oxidized film. This was due to the formation of inhomogeneous nucleation sites at the film surface. These results suggest that preferential surface oxidation of PCM is an effective method to enhance the data recording rate of phase change memory devices.

本文言語英語
論文番号231606
ジャーナルApplied Physics Letters
100
23
DOI
出版ステータス出版済み - 2012 6月 4

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