TY - JOUR
T1 - Ferromagnetic Co3Sn2S2 thin films fabricated by co-sputtering
AU - Fujiwara, Kohei
AU - Ikeda, Junya
AU - Shiogai, Junichi
AU - Seki, Takeshi
AU - Takanashi, Koki
AU - Tsukazaki, Atsushi
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - We synthesized the magnetic Weyl semimetal candidate Co3Sn2S2 as a thin film using the co-sputtering technique. By adjusting the film composition using a sulfur-rich SnS1.5 target with Co metal chips attached, we obtained highly crystallized, single-phase Co3Sn2S2 films. The films showed a ferromagnetic transition around 180 K with perpendicular remanent magnetization. We observed the anomalous Hall effect with a tangent of Hall angle of 0.20 at 130 K, as previously reported for the bulk single crystals. Angular dependence measurements suggested that the magnetization reversal process governed by the domain wall motion leads to a large coercive field in the films.
AB - We synthesized the magnetic Weyl semimetal candidate Co3Sn2S2 as a thin film using the co-sputtering technique. By adjusting the film composition using a sulfur-rich SnS1.5 target with Co metal chips attached, we obtained highly crystallized, single-phase Co3Sn2S2 films. The films showed a ferromagnetic transition around 180 K with perpendicular remanent magnetization. We observed the anomalous Hall effect with a tangent of Hall angle of 0.20 at 130 K, as previously reported for the bulk single crystals. Angular dependence measurements suggested that the magnetization reversal process governed by the domain wall motion leads to a large coercive field in the films.
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U2 - 10.7567/1347-4065/ab12ff
DO - 10.7567/1347-4065/ab12ff
M3 - Article
AN - SCOPUS:85067490365
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5
M1 - 050912
ER -