Flat-band voltage control of a back-gate MOSFET by single ion implantation

Takahiro Shinada, Atsuki Ishikawa, Chie Hinoshita, Meishoku Koh, Iwao Ohdomari

研究成果: Conference article査読

12 被引用数 (Scopus)


In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (VBG)-drain current (ID) characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study.

ジャーナルApplied Surface Science
出版ステータスPublished - 2000 8月 1
イベント5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
継続期間: 1999 7月 61999 7月 9

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜


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