TY - JOUR
T1 - Flat-band voltage control of a back-gate MOSFET by single ion implantation
AU - Shinada, Takahiro
AU - Ishikawa, Atsuki
AU - Hinoshita, Chie
AU - Koh, Meishoku
AU - Ohdomari, Iwao
N1 - Funding Information:
This work was supported by a Grant-in-Aid for Scientific Research (B) from the Ministry of Education, Sports, Science and Culture, of Japan and partly funded by a Research for the Future from the Japan Society for the Promotion of Science (JSPS).
PY - 2000/8/1
Y1 - 2000/8/1
N2 - In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (VBG)-drain current (ID) characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study.
AB - In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (VBG)-drain current (ID) characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study.
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U2 - 10.1016/S0169-4332(00)00239-7
DO - 10.1016/S0169-4332(00)00239-7
M3 - Conference article
AN - SCOPUS:0034248844
SN - 0169-4332
VL - 162
SP - 499
EP - 503
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)
Y2 - 6 July 1999 through 9 July 1999
ER -