Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si-Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semiconductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.
|ジャーナル||Journal of Nanoscience and Nanotechnology|
|出版ステータス||Published - 2009 10月|
ASJC Scopus subject areas
- 化学 (全般)