Formation of Zn defects in willemite-type Zn2 GeO4 during supercooled liquid-crystal phase transition

Yoshihiro Takahashi; Masataka Ando; Rie Ihara; Takumi Fujiwara

doi:10.1063/1.3597300

Formation of Zn defects in willemite-type Zn₂ GeO₄ during supercooled liquid-crystal phase transition

Yoshihiro Takahashi, Masataka Ando, Rie Ihara, Takumi Fujiwara

工学研究科・応用物理学専攻

研究成果: Article › 査読

13 被引用数 (Scopus)

抄録

This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn₂ GeO₄ via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn₂ GeO ₄ nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn₂ GeO₄ structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

本文言語	English
論文番号	221907
ジャーナル	Applied Physics Letters
巻	98
号	22
DOI	https://doi.org/10.1063/1.3597300
出版ステータス	Published - 2011 5月 30

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3597300

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引用スタイル

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title = "Formation of Zn defects in willemite-type Zn2 GeO4 during supercooled liquid-crystal phase transition",

abstract = "This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.",

author = "Yoshihiro Takahashi and Masataka Ando and Rie Ihara and Takumi Fujiwara",

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AU - Fujiwara, Takumi

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N2 - This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

AB - This letter elucidates the formation mechanism of interstitial Zn defects in wide band-gap semiconductive willemite-type Zn2 GeO4 via nanocrystallization in a zincogermanate glass. The results of time-development structural observations suggest that Zn2 GeO 4 nanocrystals precipitate in the nanometric Zn-condensed region, which occurs prior to nanocrystallization. The Zn-condensed environment probably promotes the capture of Zn ions in the interstitial sites of the Zn2 GeO4 structure during the structural ordering of the supercooled liquid phase. The Zn-condensation mechanism is also discussed.

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