Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Y. Hoshi; M. Higuchi; H. Iso; M. Sakamoto; K. Ooyama; H. Yuta; K. Abe; K. Hasegawa; F. Suekane; N. Kawamura; M. Neichi; K. Suzuki; K. Masuda; R. Kikuchi; K. Miyano

doi:10.1109/23.256615

Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

Y. Hoshi, M. Higuchi, H. Iso, M. Sakamoto, K. Ooyama, H. Yuta, K. Abe, K. Hasegawa, F. Suekane, N. Kawamura, M. Neichi, K. Suzuki, K. Masuda, R. Kikuchi, K. Miyano

ニュートリノ科学研究センター

研究成果: Article › 査読

3 被引用数 (Scopus)

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Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

本文言語	English
ページ（範囲）	532-536
ページ数	5
ジャーナル	IEEE Transactions on Nuclear Science
巻	40
号	4
DOI	https://doi.org/10.1109/23.256615
出版ステータス	Published - 1993 8月

ASJC Scopus subject areas

核物理学および高エネルギー物理学
原子力エネルギーおよび原子力工学
電子工学および電気工学

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10.1109/23.256615

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abstract = "Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12{\AA}, 173±16{\AA}, respectively, including the impurity effect in liquid.",

author = "Y. Hoshi and M. Higuchi and H. Iso and M. Sakamoto and K. Ooyama and H. Yuta and K. Abe and K. Hasegawa and F. Suekane and N. Kawamura and M. Neichi and K. Suzuki and K. Masuda and R. Kikuchi and K. Miyano",

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T1 - Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

AU - Hoshi, Y.

AU - Higuchi, M.

AU - Iso, H.

AU - Sakamoto, M.

AU - Ooyama, K.

AU - Yuta, H.

AU - Abe, K.

AU - Hasegawa, K.

AU - Suekane, F.

AU - Kawamura, N.

AU - Neichi, M.

AU - Suzuki, K.

AU - Masuda, K.

AU - Kikuchi, R.

AU - Miyano, K.

PY - 1993/8

Y1 - 1993/8

N2 - Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

AB - Free-ion yields from 207Bi conversion electrons were measured as a function of applied electric field in an ionization chamber filled with tetramethylsilane(TMS) or tetramethylgermanium(TMG), which were purified by simple methods. Also, the mean thermalization length of electrons liberated in the liquid was calculated by fitting a Gaussian form for the distribution function. The total free-ion yield and thermalization length in TMS and TMG were obtained to be 3.1±0.3, 3.5±0.2 and 191±12Å, 173±16Å, respectively, including the impurity effect in liquid.

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Free-Ion Yield for Tetramethylsilane and Tetrarnethylgermanium

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