Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization

T. Kosugi; Y. Umeda; T. Suemitsu; T. Enoki; Y. Yamane

doi:10.1143/jjap.40.2725

Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization

T. Kosugi, Y. Umeda, T. Suemitsu, T. Enoki, Y. Yamane

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

We investigated the frequency dispersion in drain conductance of 0.1-μm-gate InAlAs/InGaAs high-electron mobility transisters under various bias conditions in a frequency range from 9 kHz to 500 MHz using a network analyzer. The substrate current was monitored from the backside of the wafer as a measure of the impact ionization rate. The relationship between the frequency dispersion and the impact ionization is explained quite well by the model we employed here. According to the model, the extrinsic transconductance of the device is the main factor governing the frequency dispersion of the drain conductance.

本文言語	English
ページ（範囲）	2725-2727
ページ数	3
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	40
号	4 B
DOI	https://doi.org/10.1143/jjap.40.2725
出版ステータス	Published - 2001 4月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/jjap.40.2725

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引用スタイル

Kosugi, T, Umeda, Y, Suemitsu, T, Enoki, T & Yamane, Y 2001, 'Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 B, pp. 2725-2727. https://doi.org/10.1143/jjap.40.2725

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abstract = "We investigated the frequency dispersion in drain conductance of 0.1-μm-gate InAlAs/InGaAs high-electron mobility transisters under various bias conditions in a frequency range from 9 kHz to 500 MHz using a network analyzer. The substrate current was monitored from the backside of the wafer as a measure of the impact ionization rate. The relationship between the frequency dispersion and the impact ionization is explained quite well by the model we employed here. According to the model, the extrinsic transconductance of the device is the main factor governing the frequency dispersion of the drain conductance.",

keywords = "Drain conductance, Frequency dispersion, HEMT, Impact ionization, InAlAs/InGaAs, Optical communication systems, Substrate current, Transconductance",

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KW - Drain conductance

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KW - Optical communication systems

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