TY - JOUR
T1 - Fundamental characteristics of liquid cluster ion source for surface modification
AU - Takaoka, G. H.
AU - Noguchi, H.
AU - Nakayama, K.
AU - Hironaka, Y.
AU - Kawashita, M.
PY - 2005/8
Y1 - 2005/8
N2 - We have developed a cluster ion source using liquid organic materials, which has several advantages for surface modification based on the different properties of liquid cluster ions. When vapors of liquid materials such as ethanol were ejected through a nozzle into a high-vacuum region, clusters were produced by an adiabatic expansion phenomenon. The clusters produced were ionized by an electron bombardment method, and the cluster ion current increased with increase of an electron current for ionization. In order to achieve the effective transport of cluster ion beams, a unipotential or einzel lens was used. The current density was much larger than that without using the lens. Furthermore, the beam diameter could be controlled by adjusting the lens voltage, and it was changed between 5 mm and 20 mm. In addition, several kinds of substrates such as Si, SiO2, PC substrates were irradiated at different acceleration voltages with ethanol cluster ion beams, and chemical and physical sputtering with a high sputtering yield was achieved. The sputtered surfaces were very smooth at an atomic level. The liquid cluster ion beams have a high potential for surface etching with the atomic level flatness, which is not obtained by a conventional wet process.
AB - We have developed a cluster ion source using liquid organic materials, which has several advantages for surface modification based on the different properties of liquid cluster ions. When vapors of liquid materials such as ethanol were ejected through a nozzle into a high-vacuum region, clusters were produced by an adiabatic expansion phenomenon. The clusters produced were ionized by an electron bombardment method, and the cluster ion current increased with increase of an electron current for ionization. In order to achieve the effective transport of cluster ion beams, a unipotential or einzel lens was used. The current density was much larger than that without using the lens. Furthermore, the beam diameter could be controlled by adjusting the lens voltage, and it was changed between 5 mm and 20 mm. In addition, several kinds of substrates such as Si, SiO2, PC substrates were irradiated at different acceleration voltages with ethanol cluster ion beams, and chemical and physical sputtering with a high sputtering yield was achieved. The sputtered surfaces were very smooth at an atomic level. The liquid cluster ion beams have a high potential for surface etching with the atomic level flatness, which is not obtained by a conventional wet process.
KW - Cluster ion
KW - Ion beam
KW - Liquid cluster
KW - Surface etching
KW - Wet process
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U2 - 10.1016/j.nimb.2005.05.031
DO - 10.1016/j.nimb.2005.05.031
M3 - Conference article
AN - SCOPUS:23444461181
SN - 0168-583X
VL - 237
SP - 402
EP - 405
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-2
T2 - Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004
Y2 - 25 October 2004 through 27 October 2004
ER -