GaN-LED grown on SI substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device

Physics

• Molecular Beam Epitaxy 66%
• Metalorganic Chemical Vapor Deposition 66%
• Crystals 66%
• Semiconductor 33%
• Crystal Property 33%
• Electroluminescence 33%
• Actuators 33%
• Light Emitting Diode 33%
• Substrates 33%
• Fabrication 33%

Engineering

• Metal Organic Chemical Vapor Deposition 66%
• Light Distribution 66%
• Fabrication 33%
• Actuators 33%
• Si Wafer 33%
• Monolithic Integration 33%
• Substrates 33%

Material Science

• Microelectromechanical System 100%
• Devices 66%
• Crystal 66%
• Semiconductor Material 33%