GaN pitch-variable grating fabricated on Si substrate

H. Sameshima, T. Tanae, F. Hu, Kazuhiro Hane

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.

本文言語English
ホスト出版物のタイトル2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
ページ79-80
ページ数2
DOI
出版ステータスPublished - 2010 12月 1
イベント2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 - Sapporo, Japan
継続期間: 2010 8月 92010 8月 12

出版物シリーズ

名前2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010

Other

Other2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
国/地域Japan
CitySapporo
Period10/8/910/8/12

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 電子工学および電気工学

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