TY - GEN
T1 - GaN pitch-variable grating fabricated on Si substrate
AU - Sameshima, H.
AU - Tanae, T.
AU - Hu, F.
AU - Hane, Kazuhiro
PY - 2010/12/1
Y1 - 2010/12/1
N2 - A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.
AB - A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.
UR - http://www.scopus.com/inward/record.url?scp=78751541481&partnerID=8YFLogxK
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U2 - 10.1109/OMEMS.2010.5672174
DO - 10.1109/OMEMS.2010.5672174
M3 - Conference contribution
AN - SCOPUS:78751541481
SN - 9781424489251
T3 - 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
SP - 79
EP - 80
BT - 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
T2 - 2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Y2 - 9 August 2010 through 12 August 2010
ER -