Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates

Arpan Chakraborty, T. Onuma, T. J. Baker, S. Keller, S. F. Chichibu, S. P. Denbaars, S. Nakamura, J. S. Speck, U. K. Mishra

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

抄録

InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

本文言語英語
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings
ページ143-148
ページ数6
出版ステータス出版済み - 2006
イベント2005 Materials Research Society Fall Meeting - Boston, MA, 米国
継続期間: 2005 11月 282005 12月 1

出版物シリーズ

名前Materials Research Society Symposium Proceedings
892
ISSN(印刷版)0272-9172

会議

会議2005 Materials Research Society Fall Meeting
国/地域米国
CityBoston, MA
Period05/11/2805/12/1

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