TY - GEN
T1 - Growth of 130 μm thick epitaxial KNbO3 film by hydrothermal method
AU - Shiraishi, T.
AU - Einishi, H.
AU - Ishikawa, M.
AU - Hasegawa, T.
AU - Kurosawa, M.
AU - Funakubo, H.
PY - 2013
Y1 - 2013
N2 - KNbO3 thick films were deposited on (100)c SrRuO 3//(100)SrTiO3 substrates at 240°C for 3 h by hydrothermal method. Film thickness increased linearly with increasing the deposition number of times and 130 μm thickness was achieved by the 6 time deposition. XRD analysis showed the growth of epitaxial orthorhombic films with the mixture orientation of (100), (010) and (001). Cross-sectional SEM observation showed that the 130 μm-thick film was dense and no obvious voids inside the film. In addition, the crystal structure change along film thickness direction was not detected from the cross-sectional Raman spectral observation.
AB - KNbO3 thick films were deposited on (100)c SrRuO 3//(100)SrTiO3 substrates at 240°C for 3 h by hydrothermal method. Film thickness increased linearly with increasing the deposition number of times and 130 μm thickness was achieved by the 6 time deposition. XRD analysis showed the growth of epitaxial orthorhombic films with the mixture orientation of (100), (010) and (001). Cross-sectional SEM observation showed that the 130 μm-thick film was dense and no obvious voids inside the film. In addition, the crystal structure change along film thickness direction was not detected from the cross-sectional Raman spectral observation.
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U2 - 10.1557/opl.2013.50
DO - 10.1557/opl.2013.50
M3 - Conference contribution
AN - SCOPUS:84889258144
SN - 9781605114712
T3 - Materials Research Society Symposium Proceedings
SP - 291
EP - 296
BT - Oxide Semiconductors and Thin Films
T2 - 2012 MRS Fall Meeting
Y2 - 25 November 2012 through 30 November 2012
ER -