TY - JOUR
T1 - Growth of AgGaSe2 crystals by hot-press method
AU - Kinoshita, A.
AU - Matsuo, H.
AU - Yoshimrao, K.
AU - Ikari, T.
AU - Kakimoto, K.
PY - 2006
Y1 - 2006
N2 - Undoped polycrystalline AgGaSe2 crystals were successfully grown at a low temperature (700°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The grain size was approximately 55 nm. The presence of lattice defects such as Se vacancies and/or Ag interstitials may lead to an enhancement in electrical conductivity.
AB - Undoped polycrystalline AgGaSe2 crystals were successfully grown at a low temperature (700°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The grain size was approximately 55 nm. The presence of lattice defects such as Se vacancies and/or Ag interstitials may lead to an enhancement in electrical conductivity.
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U2 - 10.1002/pssc.200669513
DO - 10.1002/pssc.200669513
M3 - Conference article
AN - SCOPUS:33750368811
SN - 1862-6351
VL - 3
SP - 2903
EP - 2906
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 8
T2 - 15th International Conference on Ternary and Multinary Compounds, ICTMC-15
Y2 - 6 March 2006 through 10 March 2006
ER -