TY - GEN
T1 - Growth of Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal and the piezoelectric properties
AU - Kudo, Tetsuo
AU - Shoji, Yasuhiro
AU - Ohashi, Yuji
AU - Medvedev, Andrey
AU - Kurosawa, Shunsuke
AU - Yoshikawa, Akira
AU - Yokota, Yuui
AU - Kamada, Kei
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/13
Y1 - 2014/10/13
N2 - We grew Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.
AB - We grew Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.
KW - Crystal Growth
KW - Langasite
KW - Piezoelectric Material
KW - Single Crystal
UR - http://www.scopus.com/inward/record.url?scp=84910001781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84910001781&partnerID=8YFLogxK
U2 - 10.1109/ISAF.2014.6922990
DO - 10.1109/ISAF.2014.6922990
M3 - Conference contribution
AN - SCOPUS:84910001781
T3 - 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
BT - 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
Y2 - 12 May 2014 through 16 May 2014
ER -