Growth of GaN quantum well film on Si substrate and its application to a GaN-Si hybrid lightning device

F. R. Hu, R. Ito, Y. Zhao, Y. Kanamori, K. Hane

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

2 被引用数 (Scopus)

抄録

We propose here a new light source with a light beam steering mechanism. The direction of the light beam emitted from an array of the light emitting diodes (LEDs) can be changed by a micro-actuator. The proposed device is monolithically composed of the GaN LEDs and Si MEMS structure. Basic researches on the growth of GaN crystals on Si substrate were carried out. Quantum well (QW) structures consisting of InGaN/GaN crystals were formed with a buffer layer between the GaN crystal and Si substrate. Column-like GaN crystals with the QWs were grown Due to the column structure and the buffer layer, the crystals were relaxed enough to obtain strong photoluminescence. From Si substrate with GaN crystal, a micro-stage with comb actuators on which the InGaN/GaN QW film is patterned has also been fabricated.

本文言語英語
ホスト出版物のタイトルIEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006
出版社IEEE Computer Society
ページ27-28
ページ数2
ISBN(印刷版)078039562X, 9780780395626
DOI
出版ステータス出版済み - 2006
イベントIEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006 - Big Sky, MT, 米国
継続期間: 2006 8月 212006 8月 24

出版物シリーズ

名前IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006

会議

会議IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006
国/地域米国
CityBig Sky, MT
Period06/8/2106/8/24

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