TY - JOUR
T1 - Growth of Large Single Crystals of n-Type SnS from Halogen-Added Sn Flux
AU - Kawanishi, Sakiko
AU - Suzuki, Issei
AU - Ohsawa, Takeo
AU - Ohashi, Naoki
AU - Shibata, Hiroyuki
AU - Omata, Takahisa
N1 - Funding Information:
The authors thank Prof. Chichibu and Prof. Shima at Tohoku University for help with the Hall measurement equipment. The authors would also like to thank Prof. Fujita and Prof. Ikeda at Tohoku University for help using the Laue analysis equipment. The authors are deeply grateful to Mr. Kamaya and Mr. Saito at Tohoku University for their technical support in EPMA analysis and optical property measurements, respectively. This research was partly supported by the IMRAM project funding (2019), “Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials” from MEXT, and NIMS Joint Research Hub Program.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/9/2
Y1 - 2020/9/2
N2 - We report the growth of large Cl-doped and Br-doped SnS single crystals from a molten Sn-based flux. Compared with the small and lamellar undoped SnS crystals, the addition of SnCl2 or SnBr2 halogen sources in the flux substantially enhanced lateral growth along the (100)-plane and vertical growth. The maximum size of the obtained single crystals reached a diameter and thickness of 16 mm and 0.7 mm for the Cl-doped SnS and 24 mm and 1.0 mm for the Br-doped SnS, respectively. The X-ray rocking curves and the X-ray back-reflection Laue patterns indicated a high crystal quality. The obtained crystals were further characterized via electrical measurements, including electrical conductivity and Hall measurements, optical absorption spectroscopy, and X-ray and ultraviolet photoelectron spectroscopies. Both the Cl-doped and Br-doped SnS single crystals exhibited degenerate n-type conductivity with a high electrical conductivity of 11.1 S cm-1 for Cl-doped SnS and 18.9 S cm-1 for Br-doped SnS along the (100)-plane at 300 K. Furthermore, the photoelectron spectroscopy results also indicated n-type conductivity. The large single crystals of n-type SnS obtained in this work would enable the fabrication of p-n homojunction SnS solar cells via the deposition of p-type SnS thin films.
AB - We report the growth of large Cl-doped and Br-doped SnS single crystals from a molten Sn-based flux. Compared with the small and lamellar undoped SnS crystals, the addition of SnCl2 or SnBr2 halogen sources in the flux substantially enhanced lateral growth along the (100)-plane and vertical growth. The maximum size of the obtained single crystals reached a diameter and thickness of 16 mm and 0.7 mm for the Cl-doped SnS and 24 mm and 1.0 mm for the Br-doped SnS, respectively. The X-ray rocking curves and the X-ray back-reflection Laue patterns indicated a high crystal quality. The obtained crystals were further characterized via electrical measurements, including electrical conductivity and Hall measurements, optical absorption spectroscopy, and X-ray and ultraviolet photoelectron spectroscopies. Both the Cl-doped and Br-doped SnS single crystals exhibited degenerate n-type conductivity with a high electrical conductivity of 11.1 S cm-1 for Cl-doped SnS and 18.9 S cm-1 for Br-doped SnS along the (100)-plane at 300 K. Furthermore, the photoelectron spectroscopy results also indicated n-type conductivity. The large single crystals of n-type SnS obtained in this work would enable the fabrication of p-n homojunction SnS solar cells via the deposition of p-type SnS thin films.
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U2 - 10.1021/acs.cgd.0c00617
DO - 10.1021/acs.cgd.0c00617
M3 - Article
AN - SCOPUS:85090478692
SN - 1528-7483
VL - 20
SP - 5931
EP - 5939
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 9
ER -