Growth of Lu2O3 and HfO2 based high melting temperature single crystals by indirect heating method using arc plasma

研究成果: ジャーナルへの寄稿学術論文査読

4 被引用数 (Scopus)

抄録

A novel single-crystal growth method was developed, using arc plasma and metal melt, for a quick survey of high melting point materials. Single crystals of Yb-doped Lu2O3, Lu0.388Hf0.612O1.806, and Lu0.18Hf0.82O1.91, with melting points of 2460, 2900, and 2840C, respectively, were grown by an indirect heating method using arc plasma. We refer to this indirect heating growth method as the core heating (CH) method. The CH-grown Yb1%-doped Lu2O3 sample showed a full width at half maximum of 286 arcsec in the X-ray rocking curve. This value is better than the 393 arcsec obtained for the crystal grown by the micro-pulling-down (µ-PD) method. The Yb charge transfer state (CTS) emission was observed at 350 nm in the Yb1%-doped Lu2O3 and Lu0.18Hf0.82O1.91. In the case of the µ-PD method, using a rhenium (Re) crucible, absorption due to Re contamination and a resulting reduction in the Yb CTS emission were confirmed. However, contamination did not influence the properties observed in the crystals grown by the CH method.

本文言語英語
論文番号619
ページ(範囲)1-8
ページ数8
ジャーナルCrystals
10
7
DOI
出版ステータス出版済み - 2020 7月

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