Growth of PrSrMnO3-like thin films on NGO (1 1 0) substrates by plasma assisted MBE

Guojun Liu; Hongmei Wang; H. Makino; Hang Ju Ko; T. Hanada; T. Yao

doi:10.1016/S0022-0248(01)00959-9

Growth of PrSrMnO₃-like thin films on NGO (1 1 0) substrates by plasma assisted MBE

Guojun Liu, Hongmei Wang, H. Makino, Hang Ju Ko, T. Hanada, T. Yao

金属材料研究所・材料設計研究部

研究成果: Conference article › 査読

3 被引用数 (Scopus)

抄録

Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr_1-xSr_xMnO₃ thin films has been carried out on NdGaO₃(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr_1-xSr_xMnO₃/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO₃ (1 1 0)∥NdGaO₃ (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.

本文言語	English
ページ（範囲）	960-965
ページ数	6
ジャーナル	Journal of Crystal Growth
巻	227-228
DOI	https://doi.org/10.1016/S0022-0248(01)00959-9
出版ステータス	Published - 2001 7月
イベント	11th International Conference on Molecular Beam Epitaxy - Bijing, China 継続期間: 2000 9月 11 → 2000 9月 15

ASJC Scopus subject areas

凝縮系物理学
無機化学
材料化学

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10.1016/S0022-0248(01)00959-9

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@article{454468507cff4c8c8f7d465314b34f03,

title = "Growth of PrSrMnO3-like thin films on NGO (1 1 0) substrates by plasma assisted MBE",

abstract = "Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr1-xSrxMnO3 thin films has been carried out on NdGaO3(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr1-xSrxMnO3/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO3 (1 1 0)∥NdGaO3 (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.",

keywords = "A1. Atomic force microscopy, A1. Reflection high energy electron diffraction, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Oxides, B2. Magnetic materials",

author = "Guojun Liu and Hongmei Wang and H. Makino and Ko, {Hang Ju} and T. Hanada and T. Yao",

note = "Funding Information: This work is supported by a Grand-in-aid for Scientific Research Priority Area for Ministry of Education, Science and Culture of Japan.; 11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00959-9",

language = "English",

volume = "227-228",

pages = "960--965",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Growth of PrSrMnO3-like thin films on NGO (1 1 0) substrates by plasma assisted MBE

AU - Liu, Guojun

AU - Wang, Hongmei

AU - Makino, H.

AU - Ko, Hang Ju

AU - Hanada, T.

AU - Yao, T.

N1 - Funding Information: This work is supported by a Grand-in-aid for Scientific Research Priority Area for Ministry of Education, Science and Culture of Japan.

PY - 2001/7

Y1 - 2001/7

N2 - Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr1-xSrxMnO3 thin films has been carried out on NdGaO3(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr1-xSrxMnO3/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO3 (1 1 0)∥NdGaO3 (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.

AB - Oxygen plasma assisted molecular beam epitaxial (MBE) growth of Pr1-xSrxMnO3 thin films has been carried out on NdGaO3(1 1 0) substrates. The growth parameters have been optimized to realize nearly 2D layer-by-layer growth. XRD results of the epi-films show that the Pr1-xSrxMnO3/NGO (1 1 0) thin films are of high crystal quality, as clear ('clean') diffraction peaks can be observed belonging to the film and the substrate, respectively. Based on analysis of the peaks, it was concluded that epitaxial relation is PrSrMnO3 (1 1 0)∥NdGaO3 (1 1 0), i.e., the c-axis being parallel to the surface. It is a different epitaxial relation from that of other growth methods.

KW - A1. Atomic force microscopy

KW - A1. Reflection high energy electron diffraction

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Oxides

KW - B2. Magnetic materials

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DO - 10.1016/S0022-0248(01)00959-9

M3 - Conference article

AN - SCOPUS:0035399125

SN - 0022-0248

VL - 227-228

SP - 960

EP - 965

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -