Growth rate of silicon nanowires

J. Kikkawa, Y. Ohno, S. Takeda

研究成果: ジャーナルへの寄稿学術論文査読

134 被引用数 (Scopus)

抄録

We have measured the growth rate of silicon nanowires (SiNWs), which were grown at temperatures between 365 and 495 °C via the vapor-liquid-solid (VLS) mechanism. We grew SiNWs using gold as catalysts and monosilane (SiH4) as a vapor phase reactant. Observing SiNWs by means of transmission electron microscopy, we have found that SiNWs with smaller diameters grow slower than those with larger ones, and the critical diameter at which growth stops completely exists. We have estimated the critical diameter of SiNWs to be about 2 nm. We have also measured the temperature dependence of the growth rate of SiNWs and estimated the activation energy of the growth of SiNWs to be 230 kJmol.

本文言語英語
論文番号123109
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
86
12
DOI
出版ステータス出版済み - 2005 3月 21

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