TY - GEN
T1 - High aspect silicon structures using metal assisted chemical etching
AU - Toan, N. V.
AU - Toda, M.
AU - Ono, T.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.
AB - This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.
UR - http://www.scopus.com/inward/record.url?scp=85006853564&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006853564&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751348
DO - 10.1109/NANO.2016.7751348
M3 - Conference contribution
AN - SCOPUS:85006853564
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 720
EP - 723
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -