抄録
A new type of superluminescent diode (SLD) with a tapered waveguide in the absorbing region is proposed. This SLD structure quite suitably monitors output power, as it emits monitor light from the rear facet that is about one-tenth the output power from the front one. Device parameters have been determined by beam propagation methods. A 1.3μm SLD fabricated by liquid phase epitaxy (LPE) with an absorbing waveguide 200μm long and with a 6.5° tapered angle can emit output power of 13.5 mW from the front facet at a 200 mA driving current without lasing.
本文言語 | English |
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ページ(範囲) | 1445-1446 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 26 |
号 | 18 |
DOI | |
出版ステータス | Published - 1990 1月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学