High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima

研究成果: Article査読

342 被引用数 (Scopus)

抄録

High-resolution X-ray photoelectron spectroscopy at 6 keV photon energy was realized by utilizing high-flux-density x rays from the third-generation high-energy synchrotron radiation facility, SPring-8. The method was applied to high-k HfO2/interlayer/Si complementary metal oxide superconductor gate-dielectric structures. Results indicated that SiOxNy as an interlayer was more effective in controlling the interface structure than SiO2.

本文言語English
ページ(範囲)1005-1007
ページ数3
ジャーナルApplied Physics Letters
83
5
DOI
出版ステータスPublished - 2003 8月 4
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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