High-resolution X-ray photoelectron spectroscopy at 6 keV photon energy was realized by utilizing high-flux-density x rays from the third-generation high-energy synchrotron radiation facility, SPring-8. The method was applied to high-k HfO2/interlayer/Si complementary metal oxide superconductor gate-dielectric structures. Results indicated that SiOxNy as an interlayer was more effective in controlling the interface structure than SiO2.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 2003 8月 4|
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