抄録
High-resolution X-ray photoelectron spectroscopy at 6 keV photon energy was realized by utilizing high-flux-density x rays from the third-generation high-energy synchrotron radiation facility, SPring-8. The method was applied to high-k HfO2/interlayer/Si complementary metal oxide superconductor gate-dielectric structures. Results indicated that SiOxNy as an interlayer was more effective in controlling the interface structure than SiO2.
本文言語 | English |
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ページ(範囲) | 1005-1007 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 83 |
号 | 5 |
DOI | |
出版ステータス | Published - 2003 8月 4 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)