High-Temperature Morphological Evolution of Lithographically Introduced Cavities in Silicon Carbide

Takayuki Narushima, Andreas M. Glaeser

研究成果: Article査読

12 被引用数 (Scopus)


Internal cavities of controlled geometry and crystallography were introduced in 6H silicon carbide single crystals by combining lithographic methods, ion-beam etching, and solid-state diffusion bonding. The morphologic evolution of these internal cavities (negative crystals) in response to anneals of up to 128 h duration at 1900°C was examined using optical microscopy. Surface energy anisotropy and faceting had a strong influence on the geometric and kinetic characteristics of evolution. Decomposition of {1210} cavity edges into {101x} facets was observed after 16 h anneals, indicating that {1210} faces are not components of the Wulff shape. The shape evolution kinetics of penny-shaped cavities were also investigated. Experimentally observed evolution rates decreased much more rapidly with those predicted by a model in which surface diffusion was assumed to be rate limiting. This suggested that the development of facets and the associated loss of ledges and terraces during the initial stages of evolution resulted in an evolution process limited by the nucleation rate of attachment/detachment sites (ledges) on the facets.

ジャーナルJournal of the American Ceramic Society
出版ステータスPublished - 2001 5月

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 材料化学


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