Highly scalable FBC (floating body cell) with 25nm BOX structure for embedded DRAM applications

Tomoaki Shino, Tomoki Higashi, Katsuyuki Fujita, Takashi Ohsawa, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

研究成果: Conference article査読

26 被引用数 (Scopus)

抄録

A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.

本文言語English
ページ(範囲)132-133
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
DOI
出版ステータスPublished - 2004
イベント2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
継続期間: 2004 6月 152004 6月 17

ASJC Scopus subject areas

  • 電子工学および電気工学

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