抄録
Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L21-L23 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 28 |
| 号 | 1 A |
| DOI | |
| 出版ステータス | Published - 1989 1月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）