Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices

Weitao Cheng; Akinobu Teramoto; Philippe Gaubert; Masaki Hirayama; Tadahiro Ohmi

doi:10.1109/ICSICT.2006.306078

Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices

Weitao Cheng, Akinobu Teramoto, Philippe Gaubert, Masaki Hirayama, Tadahiro Ohmi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Improved mobility and low flicker noise device characteristics of fully depleted silicon-on-insulator (FD-SOI) MOSFETs are focused in this paper, using normally off accumulation mode device structures. It is demonstrated that the current drivabilities of both accumulation mode FD-SOI. n-and p-MOSFETs are improved above 1.3 times compared with inversion mode MOSFETs. The effective mobilities of accumulation mode MOSFETs are improved because of the lower effective electric field at the same gate bias and the bulk current components. The flicker noise characteristics in both accumulation mode FD-SOI n- and p-MOSFETs are about 1 digit lower compared with the inversion mode MOSFETs and show the SOI layer doping concentration dependences.

本文言語	English
ホスト出版物のタイトル	ICSICT-2006
ホスト出版物のサブタイトル	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
出版社	IEEE Computer Society
ページ	65-67
ページ数	3
ISBN（印刷版）	1424401615, 9781424401611
DOI	https://doi.org/10.1109/ICSICT.2006.306078
出版ステータス	Published - 2006
外部発表	はい
イベント	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China 継続期間: 2006 10月 23 → 2006 10月 26

出版物シリーズ

名前	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
国/地域	China
City	Shanghai
Period	06/10/23 → 06/10/26

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/ICSICT.2006.306078

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引用スタイル

Cheng, W., Teramoto, A., Gaubert, P., Hirayama, M., & Ohmi, T. (2006). Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 65-67). [4098022] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306078

Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices. / Cheng, Weitao; Teramoto, Akinobu; Gaubert, Philippe その他.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 65-67 4098022 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: Conference contribution

Cheng, W, Teramoto, A, Gaubert, P, Hirayama, M & Ohmi, T 2006, Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098022, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 65-67, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06/10/23. https://doi.org/10.1109/ICSICT.2006.306078

Cheng W, Teramoto A, Gaubert P, Hirayama M, Ohmi T. Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 65-67. 4098022. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306078

Cheng, Weitao ; Teramoto, Akinobu ; Gaubert, Philippe その他. / Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 65-67 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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