Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

Wataru Mizubayashi, Shuichi Noda, Yuki Ishikawa, Takashi Nishi, Akio Kikuchi, Hiroyuki Ota, Ping Hsun Su, Yiming Li, Seiji Samukawa, Kazuhiko Endo

研究成果: ジャーナルへの寄稿学術論文査読

35 被引用数 (Scopus)

抄録

We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact.

本文言語英語
論文番号026501
ジャーナルApplied Physics Express
10
2
DOI
出版ステータス出版済み - 2017 2月

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