TY - JOUR
T1 - Improvement in ferroelectricity of HfxZr1-xO2 thin films using ZrO2 seed layer
AU - Onaya, Takashi
AU - Nabatame, Toshihide
AU - Sawamoto, Naomi
AU - Ohi, Akihiko
AU - Ikeda, Naoki
AU - Chikyow, Toyohiro
AU - Ogura, Atsushi
PY - 2017/8
Y1 - 2017/8
N2 - The effect of crystallized ZrO2 (ZrO2-seed), amorphous Hf0.43Zr0.57O2 (HZO; HZO-seed), and amorphous Al2O3 (Al2O3-seed) seed layers on the ferroelectricity of HZO films was investigated. The remanent polarization (2Pr = P+r - P-r) of a TiN-electroded capacitor with a ZrO2-seed layer was much larger than that of capacitors with a HZO-seed, Al2O3-seed, or no seed layer. Furthermore, the maximum 2Pr was exhibited when the thickness of the ZrO2-seed layer was 2 nm. Large grain growth was observed, which satisfied the same lattice pattern between ZrO2 and HZO films, and indicates that the ZrO2 seed layer plays an important role in the nucleation of the HZO film.
AB - The effect of crystallized ZrO2 (ZrO2-seed), amorphous Hf0.43Zr0.57O2 (HZO; HZO-seed), and amorphous Al2O3 (Al2O3-seed) seed layers on the ferroelectricity of HZO films was investigated. The remanent polarization (2Pr = P+r - P-r) of a TiN-electroded capacitor with a ZrO2-seed layer was much larger than that of capacitors with a HZO-seed, Al2O3-seed, or no seed layer. Furthermore, the maximum 2Pr was exhibited when the thickness of the ZrO2-seed layer was 2 nm. Large grain growth was observed, which satisfied the same lattice pattern between ZrO2 and HZO films, and indicates that the ZrO2 seed layer plays an important role in the nucleation of the HZO film.
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U2 - 10.7567/APEX.10.081501
DO - 10.7567/APEX.10.081501
M3 - Article
AN - SCOPUS:85026919279
SN - 1882-0778
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 081501
ER -