TY - JOUR
T1 - Improving resistance change with temperature and thermal stability in Fe 3 O 4 films for higherature resistors
AU - Fujiwara, Kohei
AU - Tsubota, Satoshi
AU - Tanaka, Hidekazu
N1 - Funding Information:
Acknowledgments We thank K. Matsumoto and Y. Kanai for their assistance with Si3N4 deposition, and thank K. Shinoda for our discussion. This work was partly supported by JSPS KAKENHI (No. 25790041) and Kumagai Foundation for Science and Technology. We also thank Joshua Yearsley, MS, from Edanz Group (www.edanzediting.com/ac) for editing a draft of this manuscript.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - We investigated the electrical properties of Fe 3 O 4 films grown on MgO (001) substrates by pulsed-laser deposition for use as higherature resistors. By systematically examining the thickness-dependent resistivity and magnetoresistance, we found that a film thickness of approximately 200 nm was critical to obtaining a small, bulk-like temperature coefficient of resistance at high temperature. We improved the thermal stability of Fe 3 O 4 films by surface passivation with an insulating Al 2 O 3 layer. By combining these findings, we achieved a resistance change as small as 13% over a temperature range of -40 °C to 250 °C, satisfying a basic requirement of higherature resistors.
AB - We investigated the electrical properties of Fe 3 O 4 films grown on MgO (001) substrates by pulsed-laser deposition for use as higherature resistors. By systematically examining the thickness-dependent resistivity and magnetoresistance, we found that a film thickness of approximately 200 nm was critical to obtaining a small, bulk-like temperature coefficient of resistance at high temperature. We improved the thermal stability of Fe 3 O 4 films by surface passivation with an insulating Al 2 O 3 layer. By combining these findings, we achieved a resistance change as small as 13% over a temperature range of -40 °C to 250 °C, satisfying a basic requirement of higherature resistors.
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U2 - 10.7567/1882-0786/aaf285
DO - 10.7567/1882-0786/aaf285
M3 - Article
AN - SCOPUS:85059871792
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 1
M1 - 011003
ER -