TY - JOUR
T1 - In-situ photoelectron spectroscopy of magnetic dots and magnetic semiconductor nanostructures
AU - Oshima, M.
AU - Ono, K.
AU - Mizuguchi, M.
AU - Yamada, M.
AU - Okabayashi, J.
AU - Fujimori, A.
AU - Akinaga, H.
AU - Shirai, M.
PY - 2002/5/20
Y1 - 2002/5/20
N2 - High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.
AB - High resolution angle-]resolved photoelectron spectroscopy (ARPES) has been performed on magnetic nanostructures which were in-situ grown hetero-epitaxially on GaAs substrates by low temperature molecular beam epitaxy. Sulfur termination of GaAs surfaces enabled the formation of NiAs-type MnSb dots and zinc-blende (zb) type MnAs dots, showing huge magnetoresistance at RT and half-metallic behavior, respectively. ARPES analysis revealed that the zb-MnAs dots show unique valence band feature with Mn 3d-related peak at about 4 eV of binding energy which is quite similar to (Ga,Mn)As DMS films. Zb-CrAs thin films on GaAs with Tc higher than RT are found to show the band dispersion within 2 eV near the Fermi edge, which is in good agreement with the FLAPW calculation. We have also found that (Ga,Cr)As DMS thin films have the similar valence band features to zb-CrAs.
KW - ARPES
KW - CrAs
KW - Heteroepitaxy
KW - Magnetic nanostructures
KW - Magnetic semiconductor
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M3 - Article
AN - SCOPUS:0037141282
SN - 0217-9792
VL - 16
SP - 1681
EP - 1690
JO - International Journal of Modern Physics B
JF - International Journal of Modern Physics B
IS - 11-12
ER -