抄録
Enhancement-mode InP MISFET's with anodic AI2Q3/ native oxide double-layer for gate insulator are fabricated by anodization processes in electrolyte and in oxygen plasma. Such gate structure greatly improves the device performance; high effective electron mobilities of 1500–3000 cm2/V. s and marked reduction of drain current instability were simultaneously achieved. This device performance is consistent with the interface properties obtained by C-V measurements, InP MISFET inverters as well as ring oscillators are also fabricated to demonstrate the stability of the circuit at low frequency and to show the capability of the process employed.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 1038-1043 |
| ページ数 | 6 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 31 |
| 号 | 8 |
| DOI | |
| 出版ステータス | 出版済み - 1984 8月 |