TY - JOUR
T1 - Interface structure of InGaAs wafers bonded using thin amorphous Ge films in vacuum
AU - Uomoto, Miyuki
AU - Yamada, Yuki
AU - Hoshi, Takuya
AU - Nada, Masahiro
AU - Shimatsu, Takehito
N1 - Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/2
Y1 - 2018/2
N2 - This study examines room-temperature bonding of InGaAs wafers in vacuum using thin amorphous Ge (a-Ge) films. InGaAs wafers bonded using 0.5-1-nm-thick a-Ge film on respective sides show great bonding strength comparable to the fracture strength of InGaAs after annealing at 340 °C. High-resolution images obtained using transmission electron microscopy show no vacancy at the bonded a-Ge/a-Ge interface and no clear damage of the deposited a-Ge films on the crystal lattices of the InGaAs surfaces. Analysis using electron energy-loss spectroscopy reveals a slight inter-diffusion of Ge and In at the a-Ge/InGaAs interface.
AB - This study examines room-temperature bonding of InGaAs wafers in vacuum using thin amorphous Ge (a-Ge) films. InGaAs wafers bonded using 0.5-1-nm-thick a-Ge film on respective sides show great bonding strength comparable to the fracture strength of InGaAs after annealing at 340 °C. High-resolution images obtained using transmission electron microscopy show no vacancy at the bonded a-Ge/a-Ge interface and no clear damage of the deposited a-Ge films on the crystal lattices of the InGaAs surfaces. Analysis using electron energy-loss spectroscopy reveals a slight inter-diffusion of Ge and In at the a-Ge/InGaAs interface.
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U2 - 10.7567/JJAP.57.02BA03
DO - 10.7567/JJAP.57.02BA03
M3 - Article
AN - SCOPUS:85040949814
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2
M1 - 02BA03
ER -